Teledyne Imaging’s sensor capabilities enable our space and defense partners to see farther, from X-ray to very longwave infrared.
Teledyne Imaging produces CMOS and CCD imaging sensors covering the x-ray, UV and visible wavelengths ~0.05nm to 0.01µm, 0.01 µm to 0.4 µm and 0.4µm to 0.9µm respectively. Teledyne imaging has particular specialisms in large format arrays, large pixel sizes, very low noise, high quantum efficiency (QE), back illuminated devices and near infrared (NIR) and extended shortwave infrared (eSWIR) devices for space and defense applications.
CCD and CMOS product platforms feature the following image sensor types and key features:
Array effective image area resolutions range from <50 pixels through to 85 Mpixels in standard and almost any combination of custom pixel, package, coatings and filters arrangements.
Back illumination and backthinning of the silicon in the detector area of image sensors is a very well established process, especially for CCDs and increasing for CMOS devices, for achieving high quantum efficiency and the majority of high-specification space and science applications have used such backthinned devices for many years.
Hi-RHo technology developed by Teledyne Imaging’s – e2v centre of excellence, improves red responsiveness by focussing on improving QE, at wavelengths above about 700 nm or at energy above ~3keV, by using thicker bulk silicon and means to achieve full depletion. This device technology is termed “HiRho”.
With a broad capability in infrared detectors Teledyne Imaging can provide the optimised solution for your space, defense, airborne or security application.
Technological capabilities in the infrared wavelengths span from extended shortwave infrared (eSWIR) to SWIR, MWIR, LWIR and VLWIR. Teledyne is able to offer the most appropriate technology platform according to wavelength, performance, application, size, weight, power and cost (SWaP-C), with the appropriate cooling techniques from peltier cooled through to cryo-cooled systems.
Detector solutions benefit from advanced techniques to improve quantum efficiency and sensitivity including substrate removal, fully depleted and rule 07 MCT.
Single element and FPA infrared detectors utilize a wide variety of materials such as Indium Gallium Arsenide (InGaAs), Mercury Cadmium Telluride (HgCdTe), Indium Antimonide (InSb), Indium Arsenide (InAs), Lead Sulfide (PbS), Lead Selenide (PbSe), and Germanium (Ge).
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